Method of forming conformal dielectric film having Si-N...

Details Method of forming conformal dielectric film having Si-N... Method of forming conformal dielectric film having Si-N...

2011-07-05

2011-07-05

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S723000, C438S712000, C438S710000, C438S711000, C438S763000, C257S324000, C257S632000, C257SE21266, C257SE21487, C257SE29165

Reexamination Certificate

active

07972980

ABSTRACT:
A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

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