Method of forming conductor wiring pattern

Details Method of forming conductor wiring pattern Method of forming conductor wiring pattern

2006-02-14

2006-02-14

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S643000

Reexamination Certificate

active

06998339

ABSTRACT:
A method of forming a conductor wiring pattern comprises: forming a first insulating layer on a surface of a semiconductor wafer and also forming a second, photosensitive insulating resin layer thereon; light-exposing and developing the second insulating layer to form pattern grooves so that the first insulating layer is exposed at bottoms of the pattern grooves; forming a plating seed layer on the second insulating layer including inner surfaces of the pattern grooves and then forming a resist pattern on the seed layer except for portions of the pattern grooves; filling the pattern grooves with a conductor by an electrolytic plating using the seed layer as a power supply layer; and removing the resist pattern and also removing the seed layer exposed on the surface of the second insulating layer to form a wiring pattern consisting of conductors remaining in the pattern grooves.

REFERENCES:
patent: 4624749 (1986-11-01), Black et al.
patent: 5209817 (1993-05-01), Ahmad et al.
patent: 6080656 (2000-06-01), Shih et al.
patent: 6200888 (2001-03-01), Ito et al.
patent: 2004/0166659 (2004-08-01), Lin et al.
patent: 2001-053075 (2001-02-01), None
patent: 2001-127095 (2001-05-01), None

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