Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-08
2009-02-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S068000, C438S149000, C427S064000, C427S068000, C427S532000, C257SE21592
Reexamination Certificate
active
07485576
ABSTRACT:
A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transistor manufactured using the method, and a method of manufacturing the organic thin film transistor. The method of forming a conductive pattern in a flat panel display device includes preparing a base member, forming a groove having the same shape as the conductive pattern in the base member, and forming the conductive pattern by applying a conductive material into the groove. The base member has one of a structure including a plastic substrate having the groove and a structure including a substrate and an insulating layer which is arranged on the substrate and which has the groove.
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Ahn Taek
Humbs Werner
Joerg Fischer
Kim Hye-Dong
Koo Jae-Bon
Bushnell , Esq. Robert E.
Fourson George
Parker John M
Samsung SDI & Co., Ltd.
Samsung SDI Germany GmbH
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