Method of forming conductive lines on a semiconductor wafer

Details Method of forming conductive lines on a semiconductor wafer Method of forming conductive lines on a semiconductor wafer

1996-07-31

1999-11-30

Nuzzolillo, Maria

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Combined with the removal of material by nonchemical means

438763, 438779, 438785, H01L 2144

Patent

active

059942410

ABSTRACT:
A method of forming metal lines in a patterned dielectric layer. First, a thin (50 .ANG.-500 .ANG.) metal layer of a group VB metal, preferably niobium, is formed on a patterned dielectric layer. Next, an aluminum layer or an aluminum alloy layer is formed on the thin niobium layer. The aluminum layer is preferably formed by depositing a first thickness of collimated aluminum at low temperature followed by high temperature deposition of an equal thickness of aluminum. The aluminum layer is Chem-Mech polished (CMP) with an oxidizing acidic colloidal alumina slurry to expose and oxidize the thin niobium liner which acts as a polish stop. Then, the exposed thin niobium liner is removed using CMP. Alternatively, instead of niobium, the liner may be a thin layer of a group VB metal or an alloy thereof.

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"Alternative Materials and Structure of Chemical-Mechanical Polishing Technology for Advanced CMOS Products" IBM Technical Disclosure Bulletin, vol. 37, No. 9, pp. 145-146, Sept. 1994.

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