Method of forming cobalt silicide film and method of...

Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S664000, C438S683000

Reexamination Certificate

active

06936528

ABSTRACT:
A cobalt-containing film on a silicon-containing conductive region, and a titanium-rich capping layer is formed on cobalt-containing film. The atomic % ratio of titanium to other elements (if any) in the titanium-rich capping layer is more than one (1). The resultant structure is annealed so that cobalt of the cobalt-containing film and silicon of the silicon-containing conductive region react with each other to form a cobalt silicide film. When the formation of the cobalt-containing film is carried out at a high temperature, a diffusion restraint interface film is also formed.

REFERENCES:
patent: 5911114 (1999-06-01), Naem
patent: 6171959 (2001-01-01), Nagabushnam
patent: 6329276 (2001-12-01), Ku et al.
patent: 6335294 (2002-01-01), Agnello et al.
patent: 6391767 (2002-05-01), Huster et al.
patent: 6451693 (2002-09-01), Woo et al.
patent: 6551927 (2003-04-01), Chen et al.
patent: 6657244 (2003-12-01), Dokumaci et al.
patent: 2002/0022366 (2002-02-01), Cabral et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming cobalt silicide film and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming cobalt silicide film and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming cobalt silicide film and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3509467

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.