Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2005-08-30
2005-08-30
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S664000, C438S683000
Reexamination Certificate
active
06936528
ABSTRACT:
A cobalt-containing film on a silicon-containing conductive region, and a titanium-rich capping layer is formed on cobalt-containing film. The atomic % ratio of titanium to other elements (if any) in the titanium-rich capping layer is more than one (1). The resultant structure is annealed so that cobalt of the cobalt-containing film and silicon of the silicon-containing conductive region react with each other to form a cobalt silicide film. When the formation of the cobalt-containing film is carried out at a high temperature, a diffusion restraint interface film is also formed.
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Koo Kyeong-mo
Ku Ja-hum
Park Hye-jeong
Le Thao P.
Samsung Electronics Co,. Ltd.
Volentine Francos & Whitt P.L.L.C.
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