Method of forming closely pitched polysilicon fuses

Details Method of forming closely pitched polysilicon fuses Method of forming closely pitched polysilicon fuses

1997-02-21

1998-12-22

Chang, Joni

Semiconductor device manufacturing: process

Direct application of electrical current

To alter conductivity of fuse or antifuse element

438132, 438601, 438460, H01L 21326, H01L 21479

Patent

active

058519033

ABSTRACT:
A method for decreasing the pitch of polysilicon fuses uses tungsten barriers formed adjacent to the fuse elements. The tungsten barriers are made compatible with the process to form a crack stop by stacking tugsten at the via level on top of the tungsten at the contact level in the crack stop. An interlevel dielectric is used as a cover for the fuse.

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