Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-05-27
2008-05-27
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S694000
Reexamination Certificate
active
07378347
ABSTRACT:
Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.
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Chen Yong
Kamins Theodore I.
Kuekes Philip J.
Hewlett--Packard Development Company, L.P.
Louie Wai-Sing
Nguyen Dilinh
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