Method of forming capacitors

Details Method of forming capacitors Method of forming capacitors

1998-04-14

2000-05-09

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438254, 438255, H01L 2120

Patent

active

060603674

ABSTRACT:
The method for forming a first electrodes of capacitors on a semiconductor substrate includes the steps as follows. At first, a first dielectric layer is formed. A portion of the first dielectric layer is then removed to define contact holes. A first conductive layer is formed within the contact holes and over the first dielectric layer. A second dielectric layer is formed over the first conductive layer. A portion of the second dielectric layer is removed to define the shape of the first electrodes. A second conductive layer is formed over the second dielectric layer and the first conductive layer. A first rugged silicon layer is formed over the second conductive layer. A third dielectric layer is then formed over the first rugged silicon layer. A portion of the third dielectric layer, of the first rugged silicon layer, and of the second conductive layer is removed to define capacitor area. The second dielectric layer is removed and a second rugged silicon layer is formed over the substrate. A portion of the second rugged silicon layer and a portion of the first conductive layer which are located outside the capacitor area is removed. Finally, the third dielectric layer is removed to form the first electrodes.

REFERENCES:
patent: 5858834 (1999-01-01), Hirota et al.
patent: 5858837 (1999-01-01), Sakoh et al.
patent: 5902124 (1999-05-01), Hong

Affiliated with

Also associated with

Rating

Method of forming capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1064408