Method of forming capacitor of semiconductor memory device

Details Method of forming capacitor of semiconductor memory device Method of forming capacitor of semiconductor memory device

2009-11-06

2011-10-25

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S243000, C257S304000, C257SE21011

Reexamination Certificate

active

08043925

ABSTRACT:
A method of forming a semiconductor memory device includes sequentially forming an etch stop layer and then a mold layer, forming a plurality of line-shaped support structures and a first sacrificial layer filling gaps between the support structures on the mold layer, sequentially forming a plurality of line-shaped first mask patterns, a second sacrificial layer, and then second mask patterns on the support structures and on the first sacrificial layer, removing the second sacrificial layer, the first sacrificial layer, and the mold layer using the first mask patterns, the second mask patterns, and the support structures as masks, removing the first mask patterns and second mask patterns, filling the storage node electrode holes with a conductive material and etching back the conductive material to expose the support structures, and removing the first sacrificial layer and the mold layer to form pillar-type storage node electrodes supported by the support structures.

REFERENCES:
patent: 6853023 (2005-02-01), Goebel et al.
patent: 6914286 (2005-07-01), Park
patent: 7897474 (2011-03-01), Eto
patent: 2004/0115884 (2004-06-01), Wang
patent: 2010/0200901 (2010-08-01), Kim
patent: 10-2003-0019639 (2003-03-01), None
patent: 10-2004-0001274 (2004-01-01), None
patent: 10-2004-0008698 (2004-01-01), None

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