Method of forming buried oxide layers in silicon

Details Method of forming buried oxide layers in silicon Method of forming buried oxide layers in silicon

1998-03-04

2000-07-18

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

117 84, H01L 2176

Patent

active

060906898

ABSTRACT:
A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

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