Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-12
2005-07-12
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000
Reexamination Certificate
active
06916732
ABSTRACT:
A method of forming a plurality of bumps over a wafer. The wafer has an active surface having a passivation layer and a plurality of contact pads thereon. The passivation layer exposes the contact pads on the active surface. An adhesion layer is formed over the active surface of the wafer and covers both the contact pads and the passivation layer. A metallic layer is formed over the adhesion layer. The adhesion layer and the metallic layer are patterned so that the adhesion layer and the metallic layer remain on top of the contact pads. A photoresist layer is formed on the active surface of the wafer. The photoresist layer has a plurality of openings that expose the metallic layer. Flux material is deposited into the openings and then a solder block is disposed into each of the openings. A reflow process is carried out so that the solder block bonds with the metallic layer. Finally, the flux material and the photoresist layer are removed.
REFERENCES:
patent: 6426545 (2002-07-01), Eichelberger et al.
patent: 6605524 (2003-08-01), Fan et al.
patent: 2002/0068453 (2002-06-01), Grigg et al.
patent: 2002/0093096 (2002-07-01), Tago et al.
patent: 2003/0134496 (2003-07-01), Lee et al.
Fang Jen-Kuang
Huang Min-Lung
Lee Shih-Chang
Wu Tsung-Hua
Yeh Yung-I
Advanced Semiconductor Engineering Inc.
Cao Phat X.
Jianq Chyun IP Office
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