Method of forming bit line of flash memory device

Details Method of forming bit line of flash memory device Method of forming bit line of flash memory device

2006-05-22

2010-10-05

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C257S700000, C257S758000, C257S774000, C257SE21577

Reexamination Certificate

active

07807565

ABSTRACT:
A method for forming a semiconductor device includes forming drain contact holes in a first interlayer insulating layer provided over a semiconductor substrate. First metal material is formed over the first interlayer insulating layer and fills the drain contact holes. A first metal layer formed by patterning the first metal material includes first lines and landing pads. Trenches formed in a second interlayer insulating layer formed over the patterned first metal material expose the landing pads. A second metal layer is formed by providing second metal material over the second interlayer insulating layer and filling the trenches. The second metal layer includes second lines within the trenches that contact the landing pads. The first and second metal layers define a first metal level of the semiconductor device. The first lines define odd-number lines of the first metal level, and the second lines define even-number lines of the first metal level.

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