Method of forming barrier layer for tungsten plugs in interlayer

Details Method of forming barrier layer for tungsten plugs in interlayer Method of forming barrier layer for tungsten plugs in interlayer

1998-04-29

2000-02-08

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438648, 438653, 438656, 438666, 438668, 438672, 438680, 438685, H01L 214763

Patent

active

060228008

ABSTRACT:
A method of reducing tungsten plug loss in processes for fabrication for silicon-based semiconductor devices that include a tungsten plug in a high aspect ratio contact hole. The invention provides a barrier layer prepared by first forming a conformal layer of titanium nitride by chemical vapor deposition. Afterward, another film of titanium nitride is supplied by plasma vapor deposition. The barrier layer comprises at least these two films, and tungsten is then deposited to at least fill the high aspect ratio film-coated contact hole. Upon removal of excess tungsten as by wet etch back, the tungsten plug remains essentially intact, and any plug loss is insignificant in comparison with the prior art.

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