Method of forming at least one groove in a substrate layer

Details Method of forming at least one groove in a substrate layer Method of forming at least one groove in a substrate layer

1991-09-10

1993-08-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156657, 1566591, 156651, B44C 122, C03C 1500, C03C 2506

Patent

active

052405508

ABSTRACT:
A groove is formed in a substrate layer by ion etching. The substrate layer comprises a top layer having an etch rate S1 and a bottom layer having a different etch rate S2, in which first, grooves are formed having an initial depth which differs from the desired depth, after which the etching process is carried out without using a mask until the desired depth of the groove is attained.

REFERENCES:
patent: 4484979 (1984-11-01), Stocker
patent: 4544443 (1985-10-01), Ohta et al.
patent: 4632898 (1986-12-01), Fister et al.
patent: 4655876 (1987-04-01), Kawai et al.
M. Sternheim et al, Journal of Electrochemical Society, Solid-State Science and Technology, 1983, pp. 655-659.
K. Knop et al, Journal of Applied Phys. 50 (6) 1979, pp. 3841-3848.
Journal of Applied Physics, Sep. 1989 "A Simple Process to Generate Deeply Modulated and Large Dimension Submicron Gratings on Reflecting Surfaces" Dong Chi et al.
Patent Abstracts of Japan, vol. 11, No. 77 Corresponding to JP 61 232 620.

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