Method of forming anti-fuse structure

Details Method of forming anti-fuse structure Method of forming anti-fuse structure

1998-06-23

2000-12-05

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

438467, 438600, H01L 2182

Patent

active

061565881

ABSTRACT:
The invention relates generally to integrated circuits and, in particular, to methods of forming anti-fuse structures during integrated circuit manufacture. In an exemplary embodiment of the invention, a conductive base layer is formed over a semiconductor substrate. An insulating layer is formed on the conductive base layer and is patterned to expose a portion of the conductive base layer. An anti-fuse layer is formed on the insulating layer and the exposed portion of the conductive base layer. A conductive protection layer is formed on the anti-fuse layer. An anti-fuse island is formed by sequentially removing a portion of the conductive protection layer, and underlying portions of the anti-fuse layer and the insulating layer. The conductive base layer is patterned after forming the anti-fuse island. The invention provides a simplified method for the formation of anti-fuse structures which is compatible with submicron device geometries.

REFERENCES:
patent: 4914055 (1990-04-01), Gordon et al.
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5328865 (1994-07-01), Boardman et al.

Affiliated with

Also associated with

Rating

Method of forming anti-fuse structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming anti-fuse structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming anti-fuse structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-960817