Method of forming and cleaning a laser marking region at a round

Details Method of forming and cleaning a laser marking region at a round Method of forming and cleaning a laser marking region at a round

1997-12-01

1999-09-21

Dutton, Brian

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

H01L 2176

Patent

active

059565969

ABSTRACT:
The invention relates to a wafer for use as a substrate for a semiconductor device, the wafer comprising a round zone formed along a circumference thereof; a flat zone wherein the circumference thereof is partially cut in a straight line; and a laser marking region functioning as a wafer bar-code which is formed in an upper portion of the round zone opposite to and apart from the flat zone. The wafer bar-code has holes having about 2 .mu.m depth and is formed by a soft marking process. A good fine pattern can be formed on the wafer with a follow-on patterning process by substantially cleaning photoresist materials remaining in holes of the laser marking region. Further, the occurrence of G-defects can be reduced, such defects being caused by photoresist particles remaining on the surface of the wafer.

REFERENCES:
patent: 4794238 (1988-12-01), Hampton
patent: 4825093 (1989-04-01), Kiriseko et al.
patent: 4896034 (1990-01-01), Kiriseko
patent: 5051807 (1991-09-01), Morozumi
patent: 5552591 (1996-09-01), Bossen et al.
patent: 5653045 (1997-08-01), Ferrell
Advertisement Sheet, "Hine Design: The best kept secret in Robotics and Automation", Semicon Daily News, Jul. 14, 1997.

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