Method of forming an ultra-uniform silicon-on-insulator layer

Details Method of forming an ultra-uniform silicon-on-insulator layer Method of forming an ultra-uniform silicon-on-insulator layer

1993-08-19

1994-05-10

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 62, 437974, 148DIG12, 156662, H01L 21306

Patent

active

053104510

ABSTRACT:
A method of forming a thin semiconductor layer having ultra-high thickness uniformity and upon which semiconductor structures can subsequently be formed is disclosed. The method comprises providing a primary substrate having a prescribed total thickness variation (TTV). A stack is formed upon the primary substrate for compressing thickness variation to be transferred into the thin semiconductor layer. An epitaxial silicon layer of a desired SOI thickness is formed upon the stack. The epitaxial silicon layer is then bonded to a mechanical substrate to form a bonded substrate pair, the mechanical substrate having a prescribed TTV and the bonded substrate pair having a combined TTV equal to the sum of the TTVs of the primary and mechanical substrates, respectively. The primary substrate is subsequently removed, wherein the combined TTV of the bonded substrate pair is transferred and compressed into the stack by a first compression amount. The stack is thereafter removed, wherein the combined TTV of the bonded substrate pair is further transferred and compressed a second compression amount into said epitaxial silicon layer, whereby said epitaxial silicon layer remains on said mechanical substrate to form the semiconductor layer of ultra-high thickness uniformity, the thickness uniformity being a controlled function of the first and second compression amounts.

REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4735679 (1988-04-01), Lasky
patent: 4962051 (1990-10-01), Liaw
patent: 4983251 (1991-01-01), Haisma et al.
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5034343 (1991-07-01), Rouse et al.
patent: 5234535 (1993-08-01), Beyer et al.
P. E. Cade et al., "Methods of Producing Single-Crystal Silicon on Silicon Dioxide", IBM Technical Disclosure Bulletin, vol. 28, No. 5, Oct. 1985, pp. 1855-1856.

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