Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-11
2011-01-11
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S424000, C257SE21564
Reexamination Certificate
active
07867893
ABSTRACT:
A method is provided of forming a conductive via for contacting a bulk semiconductor region of a semiconductor-on-insulator (“SOI”) substrate. A first opening is formed in a conformal layer overlying a trench isolation region, where the trench isolation region shares an edge with the SOI layer. A dielectric layer then is deposited atop the conformal layer and the trench isolation region, after which a second opening is formed which is aligned with the first opening, the second opening extending through the dielectric layer to expose the bulk semiconductor region. Finally, the conductive via is formed in the second opening.
REFERENCES:
patent: 6645796 (2003-11-01), Christensen et al.
patent: 2003/0203546 (2003-10-01), Burbach et al.
patent: 2004/0121599 (2004-06-01), Aminpur et al.
patent: 2008/0164531 (2008-07-01), Jawarani et al.
Divakaruni Ramachandra
Kim Byeong Y.
Lee Junedong
Sudo Gaku
Yang Haining S.
Cai Yuanmin
Dickey Thomas L
Erdem Fazli
International Business Machines - Corporation
Kabushiki Kaisha Toshiba
LandOfFree
Method of forming an SOI substrate contact does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming an SOI substrate contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an SOI substrate contact will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2697563