Method of forming an oxide film

Details Method of forming an oxide film Method of forming an oxide film

2005-11-01

2005-11-01

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S072000

Reexamination Certificate

active

06960812

ABSTRACT:
A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.

REFERENCES:
patent: 3477936 (1969-11-01), Gillery et al.
patent: 3692571 (1972-09-01), Colton et al.
patent: 3967253 (1976-06-01), Tsuruishi
patent: 4007294 (1977-02-01), Woods et al.
patent: 4470060 (1984-09-01), Yamazaki
patent: 4489478 (1984-12-01), Sakurai
patent: 4567061 (1986-01-01), Hayashi et al.
patent: 4624737 (1986-11-01), Shimbo
patent: 4772927 (1988-09-01), Saito et al.
patent: 4810673 (1989-03-01), Freeman
patent: 4849081 (1989-07-01), Ross
patent: 4894352 (1990-01-01), Lane et al.
patent: 4943837 (1990-07-01), Konishi et al.
patent: 5013691 (1991-05-01), Lory et al.
patent: 5037766 (1991-08-01), Wang
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5288518 (1994-02-01), Homma
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5837614 (1998-11-01), Yamazaki et al.
patent: 5866932 (1999-02-01), Yamazaki et al.
patent: 5874766 (1999-02-01), Hori
patent: 6025630 (2000-02-01), Yamazaki et al.
patent: 6586346 (2003-07-01), Yamazaki et al.
patent: 0 076 161 (1983-04-01), None
patent: 0 349 187 (1990-01-01), None
patent: 1096925 (1967-12-01), None
patent: 61-063020 (1986-04-01), None
patent: 62-261128 (1987-11-01), None
patent: 01-149476 (1989-06-01), None
patent: 01-238024 (1989-09-01), None
patent: 03-036767 (1991-02-01), None
patent: 03-093273 (1991-04-01), None
patent: 03-268429 (1991-11-01), None
patent: 03-289140 (1991-12-01), None
patent: 04-360533 (1992-12-01), None
patent: 05-175132 (1993-07-01), None
patent: 05-267480 (1993-10-01), None
patent: 06-053503 (1994-02-01), None
patent: 06-287755 (1994-10-01), None
Suyama et al., Chem Abstract 109573w, “High-quality gate-oxide films for low temperature fabricated polysilicon TFTS”, Mar. 12, 1990, p. 750, vol. 112, No. 11.
Schreiber et al., J. Electrochem Soc., vol. 123, No. 1, pp. 30-33 (1976).
Harding, “High Rate D.C. Reactively Sputtered Metal-Oxy-Fluorine Dielectric Materials”, Thin Solid Films, vol. 138, pp. 279-287, 1986.
European Search Report, Jul. 1991.
Suyama et al., “Effects of Oxygen-Argon Mixing on Properties of Sputtered Silicon Dioxide Films”, Journal of the Electrochemical Society, vol. 134, No. 9, Sep. 1987, pp. 2260-2264.
Ng, Kwok K., “Complete Guide to Semiconductor Devices”, New York: McGraw-Hill, Inc., 1995, pp. 1-2.
McGraw-Hill Dictionary of Scientific and Technical Terms, Third Edition, McGraw-Hill Book Company, p. 823.
Handbook of Chemistry and Physics, 55thEdition, CRC Press, Inc.

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