Method of forming an organic semiconductor pattern and...

Details Method of forming an organic semiconductor pattern and... Method of forming an organic semiconductor pattern and...

2006-01-20

2009-08-11

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S082000, C438S759000, C438S780000, C257S040000, C257S642000, C257S643000, C156S442000, C156S528000, C216S036000

Reexamination Certificate

active

07572667

ABSTRACT:
A method of forming an organic semiconductor pattern is provided. A pattern is formed on a first substrate. An adhesive is coated on the pattern to form an adhesive pattern. An organic semiconductor layer is formed on a second substrate. The second substrate is combined with the first substrate to remove a portion of the organic semiconductor layer attached to the pattern from the second substrate to form the organic semiconductor pattern.

REFERENCES:
patent: 6344660 (2002-02-01), Dimitrakopoulos et al.
patent: 6838776 (2005-01-01), Leal et al.
patent: 6966997 (2005-11-01), Inganas et al.
patent: 2002/0094594 (2002-07-01), Kim et al.

Affiliated with

Also associated with

Rating

Method of forming an organic semiconductor pattern and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an organic semiconductor pattern and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an organic semiconductor pattern and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4083214