Method of forming an organic polymer insulating film in a semico

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438 80, 437100, 437430, H01L 2131

Patent

active

061502847

ABSTRACT:
A method of forming an organic polymer insulator in a semiconductor device comprises the step of causing a thermal polymerization of at least one kind of monomers and oligomers supplied in vapor phase.

REFERENCES:
patent: 5079221 (1992-01-01), Morohashi
patent: 5284779 (1994-02-01), Miyanaga
patent: 5415889 (1995-05-01), Nakayama et al.
J. Wary et al., "Vacuum-Deposited Parylene AF-4 : A Thermally Stable, Low Dielectric Constant Polymer For Interlayer Dielectric Use", pp. 207-213, DUMIC Conference, Feb. 20-21, 1996.
M.R. Schneider, "A Multilayer Interconnect Process for VLSI GaAs ICs Employing Polyimide Interlayer Dielectrics", pp. 93-99, VMIC Conference, Jun. 9-10, 1992.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming an organic polymer insulating film in a semico does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an organic polymer insulating film in a semico, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an organic polymer insulating film in a semico will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1256905

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.