Method of forming an opening in an insulation film over a semico

Details Method of forming an opening in an insulation film over a semico Method of forming an opening in an insulation film over a semico

1997-11-10

2000-02-22

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438106, 438107, 438616, H01L 21469

Patent

active

060279931

ABSTRACT:
The present invention provides a method of forming an opening an insulation layer over a substrate. A photo-resist film with at least an opening is formed over a substrate. A first spacer layer is selectively formed within the opening of the photo-resist film. The photo-resist film is removed to have the first spacer layer remain over the substrate. An insulation layer is formed which extends over the first spacer layer and the substrate so that the insulation layer over the first spacer layer is higher in level than the insulation layer over the substrate. A second spacer layer is formed which extends over the insulation layer over the substrate so that the insulation layer over the first spacer layer is shown. Both the insulation layer over the first spacer layer and the second spacer layer are selectively removed so that the insulation layer over the substrate and the first spacer layer are shown. Only the first spacer layer is subjected to a wet etching to remove the first spacer layer without any substantive damage to the substrate and in place form an opening in the insulation layer, wherein the first spacer layer is made of a material which is higher in etching rate than an insulation material of the insulation layer.

REFERENCES:
patent: 4337115 (1982-06-01), Ikeda et al.

Affiliated with

Also associated with

Rating

Method of forming an opening in an insulation film over a semico does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an opening in an insulation film over a semico, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an opening in an insulation film over a semico will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-520154