Method of forming an ohmic contact to III-V semiconductor materi

Details Method of forming an ohmic contact to III-V semiconductor materi Method of forming an ohmic contact to III-V semiconductor materi

1992-04-20

1994-01-04

Maples, John S.

Fishing, trapping, and vermin destroying

437192, 437202, 437247, 148DIG20, H01L 21441, H01L 21324

Patent

active

052759717

ABSTRACT:
An ohmic contact to a III-V semiconductor material is fabricated. First, a III-V semiconductor material is provided. Source/drain regions are then formed in the III-V semiconductor material. On the III-V semiconductor material, a contact system is formed which is dry etchable using reactive ions such as chlorine or fluorine and substantially free of arsenic. Subsequently, a portion of the contact system is dry etched using reactive ions such as chlorine or fluorine to leave a portion of the contact system remaining on the source/drain regions. Then, the III-V semiconductor material and the contact system are annealed in an atmosphere substantially free of arsenic at a temperature at which at least a part of the contact system is alloyed with the source/drain regions to form an ohmic contact with the source/drain regions of the III-V semiconductor material.

REFERENCES:
DuBon Chevalier et al. "GeMoW Refractory Ohmic Contact . . . ", J. Electrochem Soc., vol. 137, No. 5, May 1990, pp. 1514-1519.
Marshall et al, "Planar Ge/Pd Au Alloyed Au-Ge-Ni . . . ", Appl Phys Lett, 54(8), Feb. 20, 1989, pp. 721-723.
Yu et al, "The Temperature Dependence of Contact Resistivity . . . ", J Appl Phys, 65(4), Feb. 15, 1989, pp. 1621-1625.

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