Method of forming an OHMIC contact on a P-type 4H-SIC substrate

Details Method of forming an OHMIC contact on a P-type 4H-SIC substrate Method of forming an OHMIC contact on a P-type 4H-SIC substrate

2011-08-30

2011-08-30

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21054, C438S523000, C438S602000, C438S931000

Reexamination Certificate

active

08008180

ABSTRACT:
A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.

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Brian J. Johnson, Michael A. Capano, “The effect of titanium on AI-Ti contacts to p-type 4H-SiC,” Solid-State Electronics 47 (2003), pp. 1437-1441.

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