Method of forming an ohmic contact in wide band semiconductor

Details Method of forming an ohmic contact in wide band semiconductor Method of forming an ohmic contact in wide band semiconductor

2006-11-28

2006-11-28

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S570000, C438S571000, C438S572000, C438S575000, C438S581000, C257SE21062

Reexamination Certificate

active

07141498

ABSTRACT:
A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.

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