Method of forming an isolation film in a semiconductor device

Details Method of forming an isolation film in a semiconductor device Method of forming an isolation film in a semiconductor device

2005-06-20

2008-11-11

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S223000, C438S224000, C257S335000, C257S339000

Reexamination Certificate

active

07449400

ABSTRACT:
The present invention relates to an isolation film in a semiconductor device and method of forming the same. An isolation film is formed in a doped region of a peripheral region, in which the doped region is isolated from a deep well region of a cell region and the isolation film is thicker than an isolation film of the cell region so that a parasitic transistor is not generated and a leakage current can be prevented.

REFERENCES:
patent: 6927089 (2005-08-01), Rhodes
patent: 2003-086766 (2003-03-01), None
patent: 1020040082881 (2004-09-01), None
patent: 1020040087043 (2004-10-01), None

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