Method of forming an interlevel dielectric layer employing...

Details Method of forming an interlevel dielectric layer employing... Method of forming an interlevel dielectric layer employing...

2006-11-07

2006-11-07

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S702000, C438S706000, C438S710000

Reexamination Certificate

active

07132306

ABSTRACT:
A method of forming an interlevel dielectric (ILD) layer forms a polymer sacrificial ILD on a substrate. After metallization structures are formed in the polymer sacrificial ILD layer, a low power etch back is performed on the sacrificial ILD layer. Dielectric material is non-conformally deposited as an ILD layer over the substrate and the metallization structures, forming air gaps between some of the metallization structures.

REFERENCES:
patent: 6146986 (2000-11-01), Wagganer
patent: 6303464 (2001-10-01), Gaw et al.
patent: 6413854 (2002-07-01), Uzoh et al.
patent: 2005/0007217 (2005-01-01), Deligianni et al.
S. Wolf and R.N. Ttauber, Silicon Processing for the VLSI Era, vol. 1- Process Technology, Lattice Press, 1986, p. 183.
S. Wolf , Silicon Processing for the VLSI Era, vol. 4- Deep Submicron Process Technology, Lattice Press, 2002, p. 654.
Vincent Arnal et al. “A Novel SiO2-Air Low K for Copper Dual Damascene Interconnect”, Conference Proceedings ULSI XVI (2001) Materials Research Society pp. 71-77.
B. Shieh et al., “Air-Gap Formation During IMD Deposition to Lower Interconnect Capacitance”, IEEE Electron Device Letters, vol. 19, No. 1, Jan. 1998.
B. P. Shieh et al., “Integration and Reliability Issues for Low Capacitance Air-Gap Interconnect Structures”, 1998 IEEE.
Vincent Arnal et al., “Optimization of CVD Dielectric Process to Achieve Reliable Ultra Low-κ Air Gaps”, Microelectronic Engineering 60 (2002) pp. 143-148.

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