Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2011-05-24
2011-05-24
Chen, Bret (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S579000, C427S255290, C427S255370
Reexamination Certificate
active
07947338
ABSTRACT:
In a method of forming an interlayer insulating film by plasma CVD, an organic siloxane compound including one or more silicon atoms each having at least three or more units each represented by a general formula, —O—Si(R1R2)—OR3(wherein R1and R2are the same as or different from each other and are a methyl group, an ethyl group or a propyl group, and R3is the same as or different from R1and R2and is a methyl group, an ethyl group, a propyl group or a phenyl group) is used as a raw material.
REFERENCES:
patent: 6387824 (2002-05-01), Aoi
patent: 6440876 (2002-08-01), Wang et al.
patent: 6602802 (2003-08-01), Aoi
patent: 2004/0195660 (2004-10-01), Hamada et al.
patent: 2004/0216641 (2004-11-01), Hamada et al.
patent: 2007/0178319 (2007-08-01), Hamada et al.
patent: 2000-349084 (2000-12-01), None
patent: 2004-161877 (2004-06-01), None
patent: 2004-292643 (2004-10-01), None
Liu, Po-Tsun et al., “Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer”. Journal of the Electrochemical Society, 148 (2) F30-F34 (2001).
Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2005-184247, mailed Oct. 5, 2010.
Chen Bret
McDermott Will & Emery LLP
Panasonic Corporation
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