Method of forming an interconnection in a contact hole in an ins

Details Method of forming an interconnection in a contact hole in an ins Method of forming an interconnection in a contact hole in an ins

1997-06-27

1999-11-16

Chang, Joni

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, H01L 214763

Patent

active

059857560

ABSTRACT:
A method of forming an interconnection within a high aspect ratio contact hole includes, forming a contact hole in an insulation film over a silicon substrate so that a diffusion layer, formed on a surface of the silicon substrate, is shown through the contact hole, removing spontaneous oxide film from a surface of the diffusion layer shown through the contact hole, heating at a temperature in the range of 350.degree. C. to 450.degree. C. the substrate to deposit a titanium film having a first thickness t1 by a collimated sputtering method, heating the substrate to deposit a titanium nitride film having a second thickness t2 by a collimated sputtering method, and heating the substrate to cause a titanium silicidation reaction at a boundary between the titanium film and the silicon diffusion layer thereby forming a titanium silicide film on the silicon diffusion layer at the bottom of the contact hole. Thereafter, a conductive film is formed which covers the titanium nitride film. Laminations of the conductive film, the titanium nitride film and the titanium film are patterned to form an interconnection in the contact hole.

REFERENCES:
patent: 5136362 (1992-08-01), Grief et al.
patent: 5529670 (1996-06-01), Ryan et al.
patent: 5565708 (1996-10-01), Ohsaki et al.
patent: 5654233 (1997-08-01), Yu
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5747384 (1998-05-01), Miyamoto
patent: 5801096 (1998-09-01), Lee et al.

Affiliated with

Also associated with

Rating

Method of forming an interconnection in a contact hole in an ins does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an interconnection in a contact hole in an ins, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an interconnection in a contact hole in an ins will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1324326