Method of forming an interconnect using thin films of Ti and TiN

Details Method of forming an interconnect using thin films of Ti and TiN Method of forming an interconnect using thin films of Ti and TiN

1996-11-18

2000-02-08

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438649, 438668, 438680, H01L 2954

Patent

active

060227982

ABSTRACT:
A semiconductor device has a semiconductor layer such as of Si, an insulator film formed on the semiconductor layer and having a contact hole formed therein, a first contacting layer such as of Ti formed in the contact hole so as to be in contact with the semiconductor layer, a second contacting layer such as of TiN formed on the first contact material, and a contacting material such as W formed on the second contacting layer so as to substantially fill the contact hole. The first contacting layer in as formed state has a thickness of 4 nm or greater, while the second contacting layer as formed has a thickness of 1 nm or greater. The optimum thicknesses of the contacting layers are determined based on the pattern rule, e.g., 3.5 m rule, and the kinds of the materials such as Ti, TiN and W. Electrically stable ohmic contact can be obtained at a high yield.

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