Method of forming an interconnect structure with a graded compos

Details Method of forming an interconnect structure with a graded compos Method of forming an interconnect structure with a graded compos

1997-07-03

2000-02-22

Fahmy, Wael M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438688, 20419215, H01L 4900

Patent

active

060280034

ABSTRACT:
A method for forming an interconnect structure on a semiconductor wafer (114) begins by placing the wafer (114) in a process chamber (100). The process chamber (100) contains a titanium (Ti) target (102) having a thin titanium nitride (TiN) layer (104) formed thereon. An argon-based plasma (106) is used to sputter the layer (104) off of the target (102) and onto a top surface of the water (114) to form an Argon Uniquely Sputtered Titanium Nitride (AUSTiN) layer (116) which has a nitrogen concentration gradient therethrough. After forming the layer (116), an argon-nitrogen plasma (107) is initiated to reform the titanium nitride (TiN) layer (104) on the target and complete the interconnect structure by forming a top stoichiometric or near stoichiometric titanium nitride layer (118) over the layer (116).

REFERENCES:
patent: 5231053 (1993-07-01), Bost et al.
patent: 5289035 (1994-02-01), Bost et al.
patent: 5317187 (1994-05-01), Hindman et al.

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