Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-11
2011-01-11
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S513000, C438S700000, C257SE21170, C257SE21054, C257SE21267, C257SE21304, C257SE21585
Reexamination Certificate
active
07867889
ABSTRACT:
A method of forming an interconnect structure, comprising forming a first interconnect layer (123) embedded in a first dielectric layer (118), forming a dielectric tantalum nitride barrier (150) by means of atomic layer deposition on the surface of the first interconnect (123), depositing a second dielectric layer (134) over the first interconnect (123) and the barrier (150) and etching a via (154) in the dielectric layer (134) to the barrier (150). The barrier (150) is then exposed to a treatment through the via (154) to change it from the dielectric phase to the conductive phase (180) and the via (154) is subsequently filled with conductive material (123).
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Nhu David
NXP B.V.
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