Method of forming an interconnect structure for a...

Details Method of forming an interconnect structure for a... Method of forming an interconnect structure for a...

2007-04-17

2007-04-17

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S687000, C257SE21627

Reexamination Certificate

active

09982953

ABSTRACT:
A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrate as well as from the copper layer.

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