Method of forming an interconnect structure

Details Method of forming an interconnect structure Method of forming an interconnect structure

1996-05-20

1998-09-29

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438626, 438627, 438629, 438633, 438638, 438643, 438660, 438666, H01L 214763

Patent

active

058145575

ABSTRACT:
An interconnect structure (10) is formed by filling a dual damascene structure (12) with conductive material. A barrier layer (13) is formed to serve as a seed layer and to prevent the out diffusion of copper. A first conductive layer (14) is formed to fill a first portion (21) of the damascene structure (12). A second conductive layer (16) is then formed to complete the filling of a second portion (22) of the damascene structure. A polishing process is then used to remove any excess material.

REFERENCES:
patent: 3879840 (1975-04-01), Ames et al.
patent: 4489482 (1984-12-01), Keyser et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4962058 (1990-10-01), Cronin et al.
patent: 4999160 (1991-03-01), Lowrey et al.
patent: 5019531 (1991-05-01), Awaya et al.
patent: 5240880 (1993-08-01), Hindman et al.
patent: 5262354 (1993-11-01), Cote et al.
patent: 5266516 (1993-11-01), Ho
patent: 5284799 (1994-02-01), Sato
patent: 5300307 (1994-04-01), Frear et al.
patent: 5342806 (1994-08-01), Asahina
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5451551 (1995-09-01), Krishnan et al.
patent: 5527739 (1996-06-01), Parrillo
patent: 5565707 (1996-10-01), Colgan et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5633199 (1997-05-01), Fiordalice et al.
patent: 5658828 (1997-08-01), Lin et al.
S. Sun et al., "Performance of MOCVD Tantalum Nitride Diffusion Barrier for Copper Metallization," 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 29-30.

Affiliated with

Also associated with

Rating

Method of forming an interconnect structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an interconnect structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an interconnect structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-685954