Method of forming an interconnect

Details Method of forming an interconnect Method of forming an interconnect

1996-04-09

1999-09-07

Quach, T. N.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438637, 438639, 438647, 438648, 438657, 438675, H01L 21265, H01L 2128

Patent

active

059500999

ABSTRACT:
A method for fabricating a damascene interconnect includes the steps of depositing a metal layer of the surface of an insulating film; etching the metal layer and the insulating film to form an insulating groove; depositing a silicon layer on an upper surface on the metal layer and on each sidewall and a bottom of the insulating groove; annealing the silicon layer and the metal layer to form a silicide layer; implanting ions in the bottom of the insulating groove; and depositing an interconnect material in the insulating groove using selective chemical vapor deposition. In one embodiment, the metal layer is a titanium layer, the interconnect material is tungsten, and the implanted ions are arsenic ions.

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