Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1996-06-19
1998-09-08
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438573, 438962, H01L 2120, H01L 2128
Patent
active
058044752
ABSTRACT:
This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.
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Bartoli, Jr. Filbert J.
Hoffman Craig A.
Meyer Jerry R.
Bilodeau Thomas G.
McDonnell Thomas E.
Niebling John
Stockstill Charles J.
The United States of America as represented by the Secretary of
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