Method of forming an interband lateral resonant tunneling transi

Details Method of forming an interband lateral resonant tunneling transi Method of forming an interband lateral resonant tunneling transi

1995-01-27

1997-09-09

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438962, 438573, H01L 21265

Patent

active

056656181

ABSTRACT:
This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.

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