Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-01-04
2011-01-04
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S048000, C438S053000
Reexamination Certificate
active
07863069
ABSTRACT:
A method of producing an integrated MEMS resonator includes providing a substrate including single crystal silicon and partially forming a resonator in a first portion of the substrate, the resonator having a resonating element formed by the substrate and an electrode, the resonating element and the electrode forming a variable capacitor. The method also includes forming circuitry in a second portion of the substrate, the circuitry configured for detecting capacitance of the variable capacitor and finish forming the resonator and integrating the resonator with the circuitry so that the electrode is in communication with the circuitry.
REFERENCES:
patent: 5798283 (1998-08-01), Montague et al.
patent: 5963788 (1999-10-01), Barron et al.
patent: 6136630 (2000-10-01), Weigold et al.
patent: 6393913 (2002-05-01), Dyck et al.
patent: 6429755 (2002-08-01), Speidell et al.
patent: 6440766 (2002-08-01), Clark
patent: 6531331 (2003-03-01), Bennett et al.
patent: 6611033 (2003-08-01), Hsu et al.
patent: 6894576 (2005-05-01), Giousouf et al.
patent: 6894586 (2005-05-01), Bircumshaw et al.
patent: 6909221 (2005-06-01), Ayazi et al.
patent: 6985051 (2006-01-01), Nguyen et al.
patent: 7023065 (2006-04-01), Ayazi et al.
patent: 7098757 (2006-08-01), Avazi et al.
patent: 7119636 (2006-10-01), Nguyen et al.
patent: 7227432 (2007-06-01), Lutz et al.
patent: 7248131 (2007-07-01), Fazzio et al.
patent: 7295088 (2007-11-01), Nguyen et al.
patent: 7319372 (2008-01-01), Pan et al.
patent: 7323952 (2008-01-01), Pan et al.
patent: 2004/0065940 (2004-04-01), Ayazi et al.
patent: 2007/0070821 (2007-03-01), Weigold
patent: 2007/0103258 (2007-05-01), Weinstein et al.
Single-Mask Reduced-Gap Capacitive Micromachined Devices Reza Abdolvand and Farrokh Ayazi School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, USA, IEEE 2005.
SOI-Based HF and VHF Single-Crystal Silicon Resonators With Sub-100 Nanometer Vertical Capacitive Gaps, Siavash Pourkamali and Farrokh Ayazi School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 The 12th International Conference on Solid State Sensors, Actuators and Microsystems, Boston, Jun. 8-12, 2003.
High-Q Single Crystal Silicon HARPSS Capacitive Beam Resonators With Self-Aligned Sub-100-nm Transduction Gaps, Siavash Poukamali, Akinori Hasimura, Reza Abdolvand, Gavin K. Ho, Ahmet Erbil and Farrokh Ayazi Journal of Microelectromechanical Systems, vol. 12, No. 4, Aug. 2003.
High Frequency Capacitive Micromechanical Resonators With Reduced Motional Resistance Using the HARPSS Technology; Siavash Pourkamali and Farrokh Ayazi School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
VHF Single Crystal Silicon Capacitive Elliptic Bulk-Mode Disk Resonators—Part II: Implementation and Characterization Siavash Pourkamali, Zhili Hao and Farrokh Ayazi Journal of Microelectromechanical Systems, vol. 13, No. 6, Dec. 2004.
Analog Devices Inc.
Henry Caleb
Pham Thanh V
Sunstein Kann Murphy & Timbers LLP
LandOfFree
Method of forming an integrated MEMS resonator does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming an integrated MEMS resonator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an integrated MEMS resonator will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2704604