Method of forming an integrated circuit thin film resistor

Details Method of forming an integrated circuit thin film resistor Method of forming an integrated circuit thin film resistor

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S706000, C438S689000

Reexamination Certificate

active

06872655

ABSTRACT:
A thin film resistor structure (75) is formed on a dielectric layer (60). A capping layer (90) is formed above said thin film resistor structure (75) and vias (110) are formed in the capping layer (90) using a two step etching process comprising of a dry etch process and a wet etch process. Conductive layers (120) are formed in the vias and form electrical contacts to the thin film resistor structure (75).

REFERENCES:
patent: 6225183 (2001-05-01), Lee
patent: 6426268 (2002-07-01), Huppert et al.
S.Wolf & R.N. Tauber, Silicon Processing, vol. 1, Lattice Press, Caf. pp. 532-533.

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