Method of forming an insulator between features of a...

Details Method of forming an insulator between features of a... Method of forming an insulator between features of a...

2005-10-04

2005-10-04

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

C438S756000

Reexamination Certificate

active

06951817

ABSTRACT:
A method of forming an insulator between features of a semiconductor device. An insulating material such as high-density plasma (HDP) oxide is deposited over and between features formed on a semiconductor device. The height of the insulating material between the features is preferably less than the height of the features. A sputter process or other removal process is used to decrease the insulating material height of the features and decrease the insulating material height between the features. The insulating material is removed from over the top surface of the features, and a chemical-mechanical polish (CMP) process is used to lower the top surface of the features, stopping on the insulating material between the features.

REFERENCES:
patent: 6258437 (2001-07-01), Jarvis

Affiliated with

Also associated with

Rating

Method of forming an insulator between features of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an insulator between features of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an insulator between features of a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3492614