Method of forming an image sensor with large radius...

Details Method of forming an image sensor with large radius... Method of forming an image sensor with large radius...

2005-08-23

2005-08-23

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S029000, C438S031000, C438S064000, C438S065000, C438S070000

Reexamination Certificate

active

06933161

ABSTRACT:
A solid state image sensor having micro-lenses connected to each other by filling separations between trapezoidal separated sections of a protection layer with photoresist and a manufacturing method thereof comprises trapezoidal separated sections of the protection layer which is formed on a predetermined lower layer of a semiconductor substrate and convex micro-lenses having a predetermined radius of curvature that are connected to each other by filling the separations between the separated sections of the protection layer with photoresist.

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patent: 6414343 (2002-07-01), Kondo et al.
patent: 6452154 (2002-09-01), Assadi et al.
patent: 6577342 (2003-06-01), Wester
patent: 6861280 (2005-03-01), Yamamoto
patent: 60262458 (1985-12-01), None

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