Method of forming an etching mask pattern from developed...

Details Method of forming an etching mask pattern from developed... Method of forming an etching mask pattern from developed...

2007-11-30

2010-12-14

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S330000

Reexamination Certificate

active

07851135

ABSTRACT:
The present invention relates to a method of forming an etching mask pattern from developed negative and positive photoresist layers. According to the present invention, a negative photoresist layer is formed over a substrate. Some regions of the negative photoresist layer are exposed, thereby generating hydrogen ions within the exposed negative photoresist regions. The negative photoresist layer is developed so that the exposed negative photoresist regions remain. A positive photoresist layer is formed over the substrate including the remaining negative photoresist regions. The substrate is baked so that hydrogen ions within the remaining negative photoresist regions are diffused into the positive photoresist layer at boundary portions adjacent to the remaining negative photoresist regions. The positive photoresist layer is developed to remove the positive photoresist portions into which the hydrogen ions are diffused.

REFERENCES:
patent: 2002/0055064 (2002-05-01), Iguchi et al.
patent: 10-246959 (1998-09-01), None
patent: 1019990086370 (1999-12-01), None
patent: 1020050002368 (2005-01-01), None
patent: 1020070004234 (2007-01-01), None
KIPO machine translation of Han et al. KR-10-1999-0086370, previously cited as Foreign 2 of 4 on IDS Aug. 5, 2009.
KIPO machine translation of Lee et al. KR-10-2007-0004234, previously cited as Foreign 4 of 4 on IDS Aug. 5, 2009.
English translation of previously cited Lee et al. (KR 10-2007-0004234).
English translation of previously cited Han et al. (KR 10-1999-0086370).

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