Method of forming an epitaxial layer for raised drain and...

Details Method of forming an epitaxial layer for raised drain and... Method of forming an epitaxial layer for raised drain and...

2007-12-11

2007-12-11

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S747000, C438S756000, C438S770000

Reexamination Certificate

active

10786388

ABSTRACT:
According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source and drain regions, thereby effectively reducing the total thermal budget in manufacturing sophisticated field effect transistor elements. The etch recipes used enable a controlled removal of material, wherein other device components are not unduly degraded by the oxidation and etch process.

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Material Safety Data Sheet, Hydrogen Peroxide Solution; http://www.jtbaker.com/msds/englishhtml/H4065.htm, no date.

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