Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-08-16
2005-08-16
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S705000
Reexamination Certificate
active
06930030
ABSTRACT:
A method for precise thinning to form a recess to a precise depth in a crystalline silicon layer, which can be used to form various devices, such as MOSFET devices, includes the following steps. Form a patterning mask with a window therethrough over the top surface of the silicon layer. Form an amorphized region in the top surface of the silicon layer below the window. Selectively etch away the amorphized region of the silicon layer to form a recess in the surface of the silicon layer, and remove the patterning mask. In the case of an MOSFET device form a hard mask below the patterning mask with the window extending therethrough. Then create sidewall spacers in the window through the hard mask and form a gate electrode stack in the window. Then remove the hard mask and form the source/drain extensions, halos and regions plus silicide and complete the MOSFET device.
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Deshpande Sadanand V.
Rausch Werner A.
Wagner Tina J.
Chaudhuri Olik
Jones II Graham S.
Malsawma Lex H.
Schnurmann H. Daniel
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