Method of forming an electronic device including forming...

Details Method of forming an electronic device including forming... Method of forming an electronic device including forming...

2011-08-23

2011-08-23

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S733000, C438S700000

Reexamination Certificate

active

08003545

ABSTRACT:
A method of forming an electronic device can include forming a patterned mask layer overlying a underlying layer such that the mask layer has a first feature, a second feature, and a third feature, and the first feature is between the second feature and the third feature. The first feature can be spaced apart from the second feature by a first opening in the mask layer, and can be spaced apart from the third feature by a second opening in the mask layer. The method can further include selectively removing portions of the underlying layer under the first opening, the second opening, the second feature, and the third feature, and also removing the second feature and the third feature while leaving substantially all of the first feature and a significant portion of the underlying layer under the first feature.

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