Method of forming an electrode on a substrate of a semiconductor

Details Method of forming an electrode on a substrate of a semiconductor Method of forming an electrode on a substrate of a semiconductor

1999-03-31

2000-04-11

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438584, H01L 213205

Patent

active

060487836

ABSTRACT:
A double-layered electrode layer is formed on a substrate according to a process in which lower and upper electrode layer forming materials are deposited on a substrate in this order, then a lower photoresist pattern is formed on the upper electrode layer forming material. Next, the lower and upper electrode layer forming materials are isotropically etched to obtain lower and upper electrode layers, after which the upper electrode layer is anisotropically etched such that a width of the upper electrode layer becomes less than that of the lower electrode layer.

REFERENCES:
patent: 4473436 (1984-09-01), Beinvogl
patent: 4718973 (1988-01-01), Abraham et al.
patent: 4778563 (1988-10-01), Stone
patent: 5110411 (1992-05-01), Long
patent: 5115290 (1992-05-01), Murakami et al.
patent: 5147814 (1992-09-01), Takeuchi
patent: 5821159 (1998-10-01), Ukita

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