Method of forming an EEPROM device and structure therefor

Details Method of forming an EEPROM device and structure therefor Method of forming an EEPROM device and structure therefor

2010-06-03

2010-11-02

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29129, C257SE29300

Reexamination Certificate

active

07825454

ABSTRACT:
In one embodiment, an EEPROM device is formed to include a metal layer having an opening therethrough. The opening overlies a portion of a floating gate of the EEPROM device.

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