Method of forming an arc layer for a semiconductor device

Details Method of forming an arc layer for a semiconductor device Method of forming an arc layer for a semiconductor device

2005-06-21

2005-06-21

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S724000, C438S744000, C438S757000, C438S791000

Reexamination Certificate

active

06908852

ABSTRACT:
An antireflective coating (ARC) layer for use in the manufacture of a semiconductor device. The ARC layer has a bottom portion that has a lower percentage of silicon than a portion of the ARC layer located above it. The ARC layer is formed on a metal layer, wherein the lower percentage of silicon of the ARC layer inhibits the unwanted formation of suicides at the metal layer/ARC layer interface. In some embodiments, the top portion of the ARC layer has a lower percentage of silicon than the middle portion of the ARC layer, wherein the lower percentage of silicon at the top portion may inhibit the poisoning of a photo resist layer on the ARC layer. In one embodiment, the percentage of silicon can be increased or decreased by decreasing or increasing the ratio of the flow rate of a nitrogen containing gas with respect to the flow rate of a silicon containing gas during a deposition process.

REFERENCES:
patent: 5918147 (1999-06-01), Filipiak et al.
patent: 6100559 (2000-08-01), Park
patent: 6294820 (2001-09-01), Lucas et al.
Mahorowala et al., “Tunable Anti-Reflective Coatings with Built-in Hard Mask Properties Facilitating Thin Resist Processing,”Emerging Lithographic Technologies V, Proceedings of SPIE, 2001, vol. 4343, pp. 306-316.

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