Method of forming an antifuse and a conductive interconnect,...

Details Method of forming an antifuse and a conductive interconnect,... Method of forming an antifuse and a conductive interconnect,...

2011-02-15

2011-02-15

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S299000, C438S587000, C438S129000, C438S664000

Reexamination Certificate

active

07888255

ABSTRACT:
A first via opening is formed to a first conductor and a second via opening is formed to a second conductor. The first and second via openings are formed through insulative material. Then, the first conductor is masked from being exposed through the first via opening and to leave the second conductor outwardly exposed through the second via opening. An antifuse dielectric is formed within the second via opening over the exposed second conductor while the first conductor is masked. Then, the first conductor is unmasked to expose it through the first via opening. Then, conductive material is deposited to within the first via opening in conductive connection with the first conductor to form a conductive interconnect within the first via opening to the first conductor and to within the second via opening over the antifuse dielectric to form an antifuse comprising the second conductor, the antifuse dielectric within the second via opening and the conductive material deposited to within the second via opening. Other aspects are contemplated.

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