Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-01
2005-03-01
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S628000, C438S653000
Reexamination Certificate
active
06861349
ABSTRACT:
A method of fabricating an integrated circuit can include forming a barrier material layer along lateral side walls and a bottom of a via aperture which is configured to receive a via material that electrically connects a first conductive layer and a second conductive layer, implanting a first alloy element into an interfacial layer over the barrier material layer, depositing an alloy layer over the interfacial layer. The implanted first alloy element is reactive with the barrier material layer to increase resistance to copper diffusion.
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Besser Paul R.
Buynoski Matthew S.
Lopatin Sergey D.
Wang Pin-Chin Connie
Advanced Micro Devices , Inc.
Le Thao X.
Pham Long
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